| PART |
Description |
Maker |
| GT40M301 E001924 |
N CHANNEL TMOS TYPE(HIGH POWER SWITHCING APPLICATIONS)
From old datasheet system
HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM3J02F |
600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| SSM6J07FU |
Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| QM400HA-H |
400 A, 3 CHANNEL, NPN, Si, POWER TRANSISTOR
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| MP4412 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
TOSHIBA
|
| GT20D101 E001910 |
From old datasheet system
N CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| CM1200HG-66H |
1200 A, 3300 V, N-CHANNEL IGBT
HIGH POWER SWITCHING USE INSULATED TYPE
|
POWEREX INC
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| CM400DY-66H |
HIGH POWER SWITCHING USE INSULATED TYPE 400 A, 3300 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| MP4410 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
| SML20W65 SML20B56 |
HIGH POWER TERMINATION 56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
TT electronics Semelab, Ltd.
Seme LAB
|
